Applied Physics
Eman M. Suliman; Uday M. Nayef; Falah A. Mutlak
Abstract
In this study, Au:TiO2 nanoparticles (NPs) are prepared by using the laser ablation method in liquid at different laser energies (600, 800, and1000 mJ). After that, Au: TiO2 NPs were deposited on porous-Si(PS). Porous silicon (PS) is synthesized by using the photo-electrochemical etching (PECE) of n-type ...
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In this study, Au:TiO2 nanoparticles (NPs) are prepared by using the laser ablation method in liquid at different laser energies (600, 800, and1000 mJ). After that, Au: TiO2 NPs were deposited on porous-Si(PS). Porous silicon (PS) is synthesized by using the photo-electrochemical etching (PECE) of n-type crystalline Si (c-Si) wafers of (100) orientation. The intensity of the etching current density was (4, 12, and 20 mA/cm2), with 16% (HF), and the etching time was 15 minutes. The X-ray diffraction (XRD) techniques, scanning electron microscopy (SEM), UV–visible spectrophotometry, and electrical properties are used to characterize the obtained particles. From the photo-detector measurements, the spectral responsivity curves three inclusive regions; the first peak was due to the absorption of UV light by Au: TiO2 NPs. The second peak was corresponding to the visible light absorption with the PS layer and the third peak was due to the absorption edge of the Si substrate. The higher responsivity of Au: TiO2 NPs/PS photo-detector was found to be 2.56A/W for specimens prepared at laser energy 800mJ.
Nanotechnology
Shahad S. Khudiar; Uday M. Nayef; Falah A. Mutlak
Abstract
Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant ...
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Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydrofluoric acid of 20% and with a fixed current density of 20 mA/cm². The porous silicon morphology was investigated using scanning electron microscopy (SEM). Samples were formed by different engraving times. It revealed that the silicon surface has a layer of sponge-like structure, with the average pore diameter (740±1 nm, 550±2 nm,460±3 nm) of the porous silicon increasing as the etching time increased. PS Al PS /Si /Al photodetectors were found to work as a photodetector over a wide wavelength responsivity.