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Abstract

This article describes the synthesis and deposition of gallium nitride (GaN) by the hydrothermal method. The objective of this study is to prepare and deposit gallium nitride (GaN) on quartz substrates using the hydrothermal technique and to investigate its structural, optical, and surface properties. In this work, 0.001 g of GaN powder was dispersed in 40 ml of deionized water, and the prepared solution was used for the deposition process. The quartz substrates were then introduced into the hydrothermal system to complete the deposition on their surface. The prepared samples were characterized using XRD, UV–Vis, Raman, FESEM, and AFM techniques in order to evaluate the properties of the deposited material. The samples were analyzed using several characterization methods. The optical measurements showed an energy band gap of 3.01 eV. FESEM analysis indicated that the hydrothermal synthesis conditions had a significant effect on the morphology of the particles, where the high temperature and pressure inside the autoclave provided suitable conditions for the growth of well-developed crystals, resulting in nanorod-like structures. AFM analysis showed that the root-mean-square roughness was 3.45 nm, while the average surface roughness was 2.732 nm. Raman spectra exhibited the main peaks at 390 cm–1 and 734 cm–1, which are ascribed to the A1 (LO) phonon modes of hexagonal GaN.

DOI

10.53293/2788-6867.1185

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