Document Type : Regular Article

Authors

• Suha G. Ali
• Mohammed S. Mohammed
• Fatima I. Sultan

Department of Applied Sciences, University of Technology – Iraq

Abstract

The present work is a study of some properties of PbI₂ deposited on porous silicon (n-PSi) by using the thermal evaporation technique. X-ray diffraction, scanning electron microscopy, UV–Vis spectrophotometer, and FTIR analysis were used to characterize the structural, optical, and morphological properties of n-Psi. X-ray diffraction showed that the PbI₂ film has a hexagonal polycrystalline structure, while FE-SEM images showed porous silicone in Photoelectrochemical etching, the pore distribution is irregular and the pore refers to the increased surface area of the silicon. SEM images of pbI₂ film showed that particles were scattered and resembled gravel in size. The estimated optical energy value of thin films of PbI₂ was 2.6 eV. PbI₂ film has lower transmittance values at short wavelengths, but as the wavelength increases, the transmittance values gradually increased. The greatest transmittance value was 0.88. From FTIR analysis, chemical bonds were determined between porous silicon and PbI₂.

Keywords

• Lead iodide
• Porous silicon
• Thermal evaporation
• X-ray diffraction

Main Subjects

• Laser Science and Technology