University of Technology - IRAQ
  • Register
  • Login

Journal of Applied Sciences and Nanotechnology

  • Home
  • Browse
    • Current Issue
    • By Issue
    • By Subject
    • Keyword Index
    • Author Index
    • Indexing Databases XML
  • Journal Info
    • About Journal
    • Aims and Scope
    • Editorial Board
    • Editorial Staff
    • Publication Ethics
    • Indexing and Abstracting
    • Related Links
    • News
  • More Info
    • Document Download Center
    • Reviewer Guide
  • Article Processing Charges (APC)
  • Guide for Authors
  • Submit Manuscript
  • Contact Us
Advanced Search

Notice

As part of Open Journals’ initiatives, we create website for scholarly open access journals. If you are responsible for this journal and would like to know more about how to use the editorial system, please visit our website at https://ejournalplus.com or
send us an email to info@ejournalplus.com

We will contact you soon

  1. Home
  2. Volume 2, Issue 2
  3. Authors

Online ISSN: 2788-6867

Volume2, Issue2

Preparation and Characterization of Porous Silicon for Photodetector Applications

    Shahad S. Khudiar Uday M. Nayef Falah A. Mutlak

Journal of Applied Sciences and Nanotechnology, 2022, Volume 2, Issue 2, Pages 64-69
10.53293/jasn.2021.3646.1032

  • Show Article
  • Download
  • Cite
  • Statistics
  • Share

Abstract

Photoelectrochemical etching (PECE) was used to prepare porous silicon (PS) layers of polished surfaces of (100) n-type silicon wafers with a resistance of 0.1-100 μm and thickness of 600 ± 25 μm. The directed slices are to be catalyzed at different etching times (5, 15, 25 min) with a constant Hydrofluoric acid of 20% and with a fixed current density of 20 mA/cm². The porous silicon morphology was investigated using scanning electron microscopy (SEM). Samples were formed by different engraving times. It revealed that the silicon surface has a layer of sponge-like structure, with the average pore diameter (740±1 nm, 550±2 nm,460±3 nm) of the porous silicon increasing as the etching time increased. PS Al PS /Si /Al photodetectors were found to work as a photodetector over a wide wavelength responsivity.
Keywords:
    PECE etching Porous Silicon Etching time Photodetectors J-V characteristics
Main Subjects:
  • Nanotechnology
  • PDF (828 K)
  • XML
(2022). Preparation and Characterization of Porous Silicon for Photodetector Applications. Journal of Applied Sciences and Nanotechnology, 2(2), 64-69. doi: 10.53293/jasn.2021.3646.1032
Shahad S. Khudiar; Uday M. Nayef; Falah A. Mutlak. "Preparation and Characterization of Porous Silicon for Photodetector Applications". Journal of Applied Sciences and Nanotechnology, 2, 2, 2022, 64-69. doi: 10.53293/jasn.2021.3646.1032
(2022). 'Preparation and Characterization of Porous Silicon for Photodetector Applications', Journal of Applied Sciences and Nanotechnology, 2(2), pp. 64-69. doi: 10.53293/jasn.2021.3646.1032
Preparation and Characterization of Porous Silicon for Photodetector Applications. Journal of Applied Sciences and Nanotechnology, 2022; 2(2): 64-69. doi: 10.53293/jasn.2021.3646.1032
  • RIS
  • EndNote
  • BibTeX
  • APA
  • MLA
  • Harvard
  • Vancouver
  • Article View: 52
  • PDF Download: 21
  • LinkedIn
  • Twitter
  • Facebook
  • Google
  • Telegram
Journal Information

Publisher: University of Technology - IRAQ

Email:  jasn@uotechnology.edu.iq

Editor-in-chief: Prof. Dr. Adawiya J. Haider

  • Home
  • Glossary
  • News
  • Aims and Scope
  • Privacy Policy
  • Sitemap

Applied Sciences and Nanotechnology (JASN)

Department of Applied Sciences

University of Technology

This journal is licensed under a Creative Commons Attribution 4.0 International (CC-BY 4.0)

Powered by eJournalPlus